Evaluation and Design of GaN-Based Gate Driver Architectures for High-Efficiency Inverter Modules
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NXP Semiconductors
Turbigo
The primary goal of this thesis is to investigate the feasibility and advantages of Gallium Nitride (GaN) technology as a key component in inverter modules compared to existing solutions such as Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs). The work will be divided into three main phases. Phase 1: Technology Analysis and Benchmarking Objective: Conduct an... |
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2 giorni fa
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